Package / Case | TO-247-3 | |
---|---|---|
Mounting Type | Through Hole | |
Operating Temperature | -55°C ~ 150°C | |
Technology | SiCFET (Silicon Carbide) | |
FET Type | N-Channel | |
Current - Continuous Drain (Id) @ 25°C | 39A (Tc) | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V | |
Power Dissipation (Max) | 179W (Tc) | |
Vgs(th) (Max) @ Id | 4V @ 10mA | |
Supplier Device Package | TO-247AD | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Vgs (Max) | +22V, -6V | |
Drain to Source Voltage (Vdss) | 1200 V | |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 20 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1825 pF @ 800 V |
количество | единовременная цена | Общий ценник |
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